The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Oct. 04, 2007
Applicants:
Jing LI, Manhattan, KS (US);
Zhaoyang Fan, Manhattan, KS (US);
Jingyu Lin, Manhattan, KS (US);
Hongxing Jiang, Manhattan, KS (US);
Inventors:
Jing Li, Manhattan, KS (US);
Zhaoyang Fan, Manhattan, KS (US);
Jingyu Lin, Manhattan, KS (US);
Hongxing Jiang, Manhattan, KS (US);
Assignee:
III-N Technology, Inc., Lubbock, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed are detector devices and related methods. In an AlN EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NHis used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.