The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Oct. 12, 2005
Mitsuhiko Kitagawa, Tokyo, JP;
Yoshiaki Aizawa, Kanagawa-ken, JP;
Mitsuhiko Kitagawa, Tokyo, JP;
Yoshiaki Aizawa, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The present invention provides a MOSFET having a low on-state resistance and a high withstand voltage as well as a small output capacitance (C(gd), etc.). The MOSFET has a p-type base layerand a n-type source layerselectively formed on the surface of the p-type base layer. A n-type drain layeris formed in a position apart from the p-type base layer. On the surface of the region between the p-type base layerand the n-type drain layer, a n-type drift semiconductor layerand a p-type drift semiconductor layerare alternately arranged from the p-type base layerto the n-type drain layer. Further, in the region between the n-type source layerand the n-type drain layer, a gate electrodeis formed via a gate insulating film. With the structure, the neighboring region of the gate electrode is depleted by a built in potential between the n-type drift semiconductor layerand the p-type drift semiconductor layeror by the potential of the gate electrode, when the gate electrode, source electrode, and drain electrode are at 0 potential.