The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2009

Filed:

Aug. 22, 2006
Applicants:

Wataru Saito, Kanagawa-ken, JP;

Masaaki Onomura, Tokyo, JP;

Akira Tanaka, Kanagawa-ken, JP;

Koichi Tachibana, Kanagawa-ken, JP;

Masahiko Kuraguchi, Kanagawa-ken, JP;

Takao Noda, Kanagawa-ken, JP;

Tomohiro Nitta, Kanagawa-ken, JP;

Akira Yoshioka, Kanagawa-ken, JP;

Inventors:

Wataru Saito, Kanagawa-ken, JP;

Masaaki Onomura, Tokyo, JP;

Akira Tanaka, Kanagawa-ken, JP;

Koichi Tachibana, Kanagawa-ken, JP;

Masahiko Kuraguchi, Kanagawa-ken, JP;

Takao Noda, Kanagawa-ken, JP;

Tomohiro Nitta, Kanagawa-ken, JP;

Akira Yoshioka, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.


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