The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Jul. 27, 2005
Nobuo Eitoh, Ichihara, JP;
Noritaka Muraki, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Munetaka Watanabe, Ichihara, JP;
Nobuo Eitoh, Ichihara, JP;
Noritaka Muraki, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Munetaka Watanabe, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (), a contact metal layer () formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer () formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad () formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.