The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
May. 16, 2007
Applicants:
Tzong-liang Tsai, Taichung, TW;
Chih-ching Cheng, Taichung, TW;
Inventors:
Tzong-Liang Tsai, Taichung, TW;
Chih-Ching Cheng, Taichung, TW;
Assignee:
Huga Optotech Inc., Taichung, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 33/00 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.