The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2009

Filed:

Mar. 24, 2004
Applicants:

Yao-chun Shen, Cambridge, GB;

Edmund H. Linfield, Cambridge, GB;

Alexander G. Davies, Leeds, GB;

Inventors:

Yao-chun Shen, Cambridge, GB;

Edmund H. Linfield, Cambridge, GB;

Alexander G. Davies, Leeds, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61N 5/06 (2006.01); G01J 3/10 (2006.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter () comprising a semiconductor material (); a pair of electrodes () adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector () to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.


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