The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Jul. 12, 2007
Gyu Hyun Kim, Kyoungki-do, KR;
Yong Soo Choi, Kyoungki-do, KR;
Gyu Hyun Kim, Kyoungki-do, KR;
Yong Soo Choi, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A capacitor is formed by forming a mold insulating layer with a plurality of storage node holes over a semiconductor substrate. A metal storage node is formed on the surface of each of the storage node holes in the mold insulating layer. The mold insulating layer is removed by performing the following steps: loading the semiconductor substrate with the storage node in the chamber for in-situ cleaning, rinsing, and drying processes; removing the mold insulating layer by an etchant in the chamber; then rinsing the semiconductor substrate by introducing deionized water into the chamber while discharging the etchant out of the chamber; finally rinsing the rinsed semiconductor substrate with a mixed solution of the deionized water and organic solvent; drying the finally rinsed semiconductor substrate by IPA vapor in the chamber while discharging the mixed solution of the deionized water and organic solvent out of the chamber.