The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Jul. 20, 2006
Pang-shiu Chen, Hsinchu, TW;
Sheng-wei Lee, Taipei, TW;
Lih-juann Chen, Hsinchu, TW;
Chee-wee Liu, Taipei, TW;
Pang-Shiu Chen, Hsinchu, TW;
Sheng-Wei Lee, Taipei, TW;
Lih-Juann Chen, Hsinchu, TW;
Chee-Wee Liu, Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and further shorten growth time for forming epitaxy layers than conventional method. The method includes steps of: providing a silicon substrate, forming a multiple Ge QDs layers; forming a layer of relaxed SiGe; and forming a strained silicon layer in subsequence; wherein x is greater than 0 and less than 1.