The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7498189 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 03, 2009

Filed:

Mar. 04, 2005
Applicants:

Toshiyuki Sato, Kyoto, JP;

Satoshi Tokuda, Kusatsu, JP;

Inventors:

Toshiyuki Sato, Kyoto, JP;

Satoshi Tokuda, Kusatsu, JP;

Assignee:

Shimadzu Corporation, Kyoto-Shi, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.


Find Patent Forward Citations

Sato, Toshiyuki. (2009). Method of producing a radiation detector with a polysilicon converting layer (U.S. Patent No. 7498189). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7498189

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