The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Mar. 15, 2006
Anand Venktesh Sampath, Chevy Chase, MD (US);
Charles J. Collins, Austin, TX (US);
Gregory Alan Garrett, Kensington, MD (US);
Paul Hongen Shen, Potomac, MD (US);
Michael Wraback, Germantown, MD (US);
Anand Venktesh Sampath, Chevy Chase, MD (US);
Charles J. Collins, Austin, TX (US);
Gregory Alan Garrett, Kensington, MD (US);
Paul Hongen Shen, Potomac, MD (US);
Michael Wraback, Germantown, MD (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.