The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2009

Filed:

Feb. 15, 2007
Applicants:

Nobuaki Ueki, Kanagawa, JP;

Naotaka Mukoyama, Kanagawa, JP;

Ryoji Ishii, Kanagawa, JP;

Takeshi Nakamura, Kanagawa, JP;

Inventors:

Nobuaki Ueki, Kanagawa, JP;

Naotaka Mukoyama, Kanagawa, JP;

Ryoji Ishii, Kanagawa, JP;

Takeshi Nakamura, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/00 (2006.01); H01S 5/00 (2006.01); H01S 3/097 (2006.01);
U.S. Cl.
CPC ...
Abstract

A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than π/2 radians and within π radians, centering on the light emitting portion.


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