The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Oct. 10, 2006
Kazuhiko Aida, Chiba, JP;
Junji Hirase, Osaka, JP;
Hisashi Ogawa, Osaka, JP;
Chiaki Kudo, Hyogo, JP;
Kazuhiko Aida, Chiba, JP;
Junji Hirase, Osaka, JP;
Hisashi Ogawa, Osaka, JP;
Chiaki Kudo, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The following steps are carried out: forming a gate electrode on a semiconductor substrate with a gate insulating film interposed therebetween, forming a dummy gate electrode on the semiconductor substrate with a dummy gate insulating film interposed therebetween and forming another dummy gate electrode on the semiconductor substrate with an insulating film for isolation interposed therebetween; forming a metal film on the semiconductor while exposing the gate electrode and covering the dummy gate electrodes; and subjecting the semiconductor substrate to heat treatment and thus siliciding at least an upper part of the gate electrode. Since the gate electrode is silicided and the dummy gate electrodes are non-silicided, this restrains a short circuit from being caused between the gate electrode and adjacent one of the dummy gate electrodes.