The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Oct. 27, 2005
Applicants:
Kentaro Nakanishi, Toyama, JP;
Isao Miyanaga, Nara, JP;
Atsuhiro Kajiya, Hyogo, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device according to the present invention, the power source voltage Vddof a core transistor Trthe power source voltage Vddof an I/O transistor Trand the power source voltage Vddof an I/O transistor Trsatisfy Vdd<Vdd<VddIn a method for fabricating the semiconductor device, each of the respective gate insulating films of the I/O transistors Trand Tris formed in the same step to have the same thickness. Each of the respective SD extension regions of the core transistor Trand the I/O transistor Tris formed at the same dose.