The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Sep. 16, 2005
Applicant:
Toshikazu Onishi, Kyoto, JP;
Inventor:
Toshikazu Onishi, Kyoto, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2006.01);
U.S. Cl.
CPC ...
Abstract
An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.