The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Jan. 17, 2006
Applicants:
Seok-joo Doh, Suwon, KR;
Hyung-suk Jung, Mangpo-dong, KR;
Nae-in Lee, Seoul, KR;
Jong-ho Lee, Suwon, KR;
Yun-seok Kim, Seoul, KR;
Inventors:
Seok-Joo Doh, Suwon, KR;
Hyung-suk Jung, Mangpo-dong, KR;
Nae-in Lee, Seoul, KR;
Jong-ho Lee, Suwon, KR;
Yun-seok Kim, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.