The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2009

Filed:

Feb. 26, 2007
Applicants:

Jae Chang Jung, Seoul, KR;

Seung Chan Moon, Seoul, KR;

Cheol Kyu Bok, Icheon-si, KR;

Myoung Ja Min, Icheon-si, KR;

Keun DO Ban, Yongin-si, KR;

Hee Youl Lim, Icheon-si, KR;

Inventors:

Jae Chang Jung, Seoul, KR;

Seung Chan Moon, Seoul, KR;

Cheol Kyu Bok, Icheon-si, KR;

Myoung Ja Min, Icheon-si, KR;

Keun Do Ban, Yongin-si, KR;

Hee Youl Lim, Icheon-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.


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