The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Jun. 23, 2004
Peter L. Gammel, Millburn, NJ (US);
Bailey R. Jones, Mohnton, NJ (US);
Isik Kizilyalli, Allentown, PA (US);
Hugo F. Safar, Westfield, NJ (US);
Peter L. Gammel, Millburn, NJ (US);
Bailey R. Jones, Mohnton, NJ (US);
Isik Kizilyalli, Allentown, PA (US);
Hugo F. Safar, Westfield, NJ (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.