The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2009

Filed:

Apr. 14, 2006
Applicants:

Hwa-young Ko, Suwon-si, KR;

Kyung-rae Byun, Suwon-si, KR;

Hyoung-seub Rhie, Suwon-si, KR;

Hee-seok Kim, Seongnam-si, KR;

Jin-hwan Ham, Seoul, KR;

Suk-ho Joo, Seoul, KR;

Inventors:

Hwa-Young Ko, Suwon-si, KR;

Kyung-Rae Byun, Suwon-si, KR;

Hyoung-Seub Rhie, Suwon-si, KR;

Hee-Seok Kim, Seongnam-si, KR;

Jin-Hwan Ham, Seoul, KR;

Suk-Ho Joo, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a semiconductor device and a related method of manufacture. The semiconductor device comprises a semiconductor substrate, a conductive structure including contact regions and gate structures formed on the semiconductor substrate, a protection layer formed on the gate structures, an insulation layer formed on the protection layer, and a plurality of contacts directly contacting the contact regions and the semiconductor substrate through the insulation layer, wherein the contacts have substantially different heights from each other.


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