The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Jun. 26, 2007
Applicants:
Ming-dou Ker, Hsinchu, TW;
Che-hao Chuang, Hsinchu, TW;
Inventors:
Ming-Dou Ker, Hsinchu, TW;
Che-Hao Chuang, Hsinchu, TW;
Assignee:
Transpacific IP, Ltd., , TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 21/332 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, and a first doped region formed in the second well, wherein the first well, the second well, and the first doped region collectively form a parasitic bipolar junction transistor (BJT), and wherein the first well is the collector of the BJT, the second well is the base of the BJT, and the first doped region is the emitter of the BJT.