The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Dec. 28, 2006
Young Seung Jee, Gyeonggi-do, KR;
Suhyuk Kang, Seoul, KR;
Jeong OH Kim, Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A method for manufacturing a thin film transistor substrate using a maskless exposing device includes forming a data metal layer on a substrate having a gate pattern and common electrodes along with gate insulation layers, active layers, and ohmic contact layers for a thin film transistors; forming a photoresist on the data metal layer; exposing a first amount of light onto the photoresist at first regions, excluding a second region where data lines and thin film transistors are to be formed, by using a maskless exposing device; exposing a second amount of light onto the photoresist at third regions, where channels of the thin film transistors are to be formed, wherein the second amount of light is smaller than the first amount of light; and developing the first, second and third regions of the photoresist.