The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2009

Filed:

Feb. 23, 2007
Applicants:

Jung-sik Kim, Suwon-si, KR;

Soo-man Hwang, Hwaseong-si, KR;

Young-min Jang, Seoul, KR;

Inventors:

Jung-sik Kim, Suwon-si, KR;

Soo-man Hwang, Hwaseong-si, KR;

Young-min Jang, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a charge transfer switch circuit for selectively controlling body bias voltage of a charge transfer device, and a boosted voltage generating circuit having the same. The charge transfer switch circuit may include a capacitor whose voltage is boosted based on first and second control signals, a first transistor connected between a supply voltage and the capacitor and having a gate receiving a precharge signal, a second transistor connected between a first node and a second node and having a gate connected to a terminal of the capacitor, a third transistor connected between the first node and a bulk voltage of the second transistor and having a gate receiving the first control signal, and a fourth transistor connected between the bulk voltage of the second transistor and a ground voltage and having a gate receiving the second control signal.


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