The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Dec. 21, 2006
Toshiyuki Imai, Gunma, JP;
Junko Kimura, Tokyo, JP;
Toshiyuki Imai, Gunma, JP;
Junko Kimura, Tokyo, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Sanyo Semiconductor Manufacturing Co., Ltd., Niigata, JP;
Abstract
A first switch circuit includes first and second N-type MOSFETs. A second switch circuit includes third and fourth N-type MOSFETs. A control signal is input to a first inverter and a third inverter, the output of the first inverter input to a second inverter and the gate of the fourth MOSFET, the output of the second inverter input to the gate of the first MOSFET, the output of the third inverter input to a fourth inverter and the gate of the third MOSFET, the output of the fourth inverter input to the gate of the second MOSFET. A first input voltage is connected to the source of the second MOSFET and the sources of N-type MOSFETS in the third and fourth inverters. A second input voltage is connected the source of the fourth MOSFET and the sources of N-type MOSFETS in the first and second inverters.