The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Sep. 10, 2004
Shunpei Yamazaki, Tokyo, JP;
Toru Takayama, Kanagawa, JP;
Naoya Sakamoto, Tochigi, JP;
Kengo Akimoto, Kanagawa, JP;
Keiji Sato, Kanagawa, JP;
Tetsunori Maruyama, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Toru Takayama, Kanagawa, JP;
Naoya Sakamoto, Tochigi, JP;
Kengo Akimoto, Kanagawa, JP;
Keiji Sato, Kanagawa, JP;
Tetsunori Maruyama, Kanagawa, JP;
Abstract
According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.