The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jan. 10, 2006
James William Adkisson, Jericho, VT (US);
Jeffrey Peter Gambino, Westford, VT (US);
Mark David Jaffe, Shelburne, VT (US);
Jeffrey Bowman Johnson, Essex Junction, VT (US);
Jerome Brett Lasky, Essex Junction, VT (US);
Richard John Rassel, Colchester, VT (US);
James William Adkisson, Jericho, VT (US);
Jeffrey Peter Gambino, Westford, VT (US);
Mark David Jaffe, Shelburne, VT (US);
Jeffrey Bowman Johnson, Essex Junction, VT (US);
Jerome Brett Lasky, Essex Junction, VT (US);
Richard John Rassel, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Structures and method for forming the same. The semiconductor structure comprises a photo diode that includes a first semiconductor region and a second semiconductor region. The first and second semiconductor regions are doped with a first and second doping polarities, respectively, and the first and second doping polarities are opposite. The semiconductor structure also comprises a transfer gate that comprises (i) a first extension region, (ii) a second extension region, and (iii) a floating diffusion region. The first and second extension regions are in direct physical contact with the photo diode and the floating diffusion region, respectively. The semiconductor structure further comprises a charge pushing region. The charge pushing region overlaps the first semiconductor region and does not overlap the floating diffusion region. The charge pushing region comprises a transparent and electrically conducting material.