The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jun. 13, 2005
Sergey Pidin, Kawasaki, JP;
Sergey Pidin, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A semiconductor device wherein the same metal gate material is used for both an n-channel CMOS transistor and a p-channel CMOS transistor and a manufacturing method therefor are disclosed. The n-channel transistor includes an impurity region, a first gate laminated body that has a gate oxide film and a gate electrode but does not have a gate electrode sidewall insulating film, and a first silicon nitride film that has a tensile stress and covers the surface of a semiconductor substrate and the first gate laminated body. The p-channel transistor includes an impurity region; a second gate laminated body that has a gate oxide film, a gate electrode, and a gate electrode sidewall insulating film; and a second silicon nitride film that has a compressive stress and covers the surface of the semiconductor substrate and the second gate laminated body.