The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Feb. 28, 2006
Youichi Nagai, Osaka, JP;
Koji Katayama, Itami, JP;
Hiroyuki Kitabayashi, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A light-emitting device is equipped with a GaN substrate; an n-type AlGaN layer on a first main surface side of the GaN substrate; a p-type AlGaN layer positioned further away from the GaN substrate than the n-type AlGaN layer; and a multi-quantum well (MQW) positioned between the n-type AlGaN layer and the p-type AlGaN layer. In the light-emitting device, the p-type AlGaN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrateand a protective film formed to cover the side wall of the n-electrode.