The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Dec. 18, 2003
Applicants:
Shunpei Yamazaki, Tokyo, JP;
Mitsunori Sakama, Kanagawa, JP;
Takeshi Fukada, Kanagawa, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CH, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
Yamazaki, Shunpei. (2009). Apcvd method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical (U.S. Patent No. 7491659). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7491659
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile