The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Feb. 02, 2005
Timothy J. Brosnihan, Natick, MA (US);
Robert E. Sulouff, Jr., Bedford, MA (US);
John M. Sledziewski, Hanover, MA (US);
Timothy J. Brosnihan, Natick, MA (US);
Robert E. Sulouff, Jr., Bedford, MA (US);
John M. Sledziewski, Hanover, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A method of forming a MEMS device provides a wafer having a base, a first conductive layer, a second conductive layer, and an intermediate conductive layer. After it provides the wafer, the method removes at least a portion of the intermediate conductive layer to form a cavity between the first and second conductive layers. At least a portion of the first conductive layer is movable relative to the base to form a diaphragm, while the second conductive layer is substantially immovable relative to the base. After it forms the cavity, the method seals the cavity.