The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2009

Filed:

Jul. 03, 2006
Applicants:

Shinya Kikugawa, Chiyoda-ku, JP;

Keigo Hino, Takasago, JP;

Hitoshi Mishiro, Takasago, JP;

Inventors:

Shinya Kikugawa, Chiyoda-ku, JP;

Keigo Hino, Takasago, JP;

Hitoshi Mishiro, Takasago, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is to provide a photomask substrate which has a low birefringence and with which polarized illumination can be employed or immersion exposure can be carried out. A photomask substrate made of a synthetic quartz glass to be used for production of a semiconductor employing a light source having an exposure wavelength of at most about 200 nm, which has a birefringence of at most 1 nm/6.35 mm at the exposure wavelength, and of which the amount of decrease in light transmittance is at most 1.0% as a difference in light transmittance at a wavelength of 217 nm, between before and after irradiation with Xe excimer lamp with an illuminance of 13.2 mW/cmfor 20 minutes.


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