The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jan. 30, 2007
Detlev Richter, München, DE;
Mirko Reissmann, Ottendorf-Okrilla, DE;
Volker Zipprich-rasch, Dresden, DE;
Gert Köbernik, Unterhaching, DE;
Uwe Augustin, Dresden, DE;
Konrad Seidel, Dresden, DE;
Andreas Kux, Haar, DE;
Hans Heitzer, München, DE;
Daniel-andré Löhr, Dresden, DE;
Sören Irmer, Radebeul, DE;
Detlev Richter, München, DE;
Mirko Reissmann, Ottendorf-Okrilla, DE;
Volker Zipprich-Rasch, Dresden, DE;
Gert Köbernik, Unterhaching, DE;
Uwe Augustin, Dresden, DE;
Konrad Seidel, Dresden, DE;
Andreas Kux, Haar, DE;
Hans Heitzer, München, DE;
Daniel-André Löhr, Dresden, DE;
Sören Irmer, Radebeul, DE;
Qimonda Flash GmbH & Co. KG, Dresden, DE;
Abstract
A memory device is provided including memory cells that are capable of switching between at least two states, where the threshold of a sense signal for detecting the current state depends on a data content of the memory cell. Parallel to a user data block, a primary control word including a predetermined number of bits of a first state is stored in a check section of the cell array. The check section is read by applying sense signals of different amplitudes, where in each case a secondary control word is obtained. By checking in each secondary control word the number of bits of the first state, the margins of the current sense signal amplitude towards the sense window limits may be checked and the sense signal amplitude may be adapted permanently to a sense window drift, so as to enhance the reliability of the memory device.