The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
May. 09, 2007
Saikat Sarkar, Atlanta, GA (US);
Padmanava Sen, Atlanta, GA (US);
Stephane Pinel, Atlanta, GA (US);
Joy Laskar, Marietta, GA (US);
Saikat Sarkar, Atlanta, GA (US);
Padmanava Sen, Atlanta, GA (US);
Stephane Pinel, Atlanta, GA (US);
Joy Laskar, Marietta, GA (US);
Georgia Tech Research Corp., Atlanta, GA (US);
Abstract
Disclosed is a gain boosting technique for use with millimeter-wave cascode amplifiers. The exemplary technique may be implemented using a 0.18 μm SiGe process (F=140 GHz). It has also been shown that the technique is effective for CMOS processes with comparable F. An exemplary gain-enhanced cascode stage was measured to have higher than 9 dB gain with a 1-dB bandwidth above 6 GHz with a DC power consumption of 13 mW. In addition, one cascode stage without gain boosting may be cascaded with two gain-boosted cascode amplifier stages to implement a three-stage LNA. The measured stable gain is higher than 24 dB at 60 GHz with a 3-dB bandwidth of 3.1 GHz for 25 mW of DC power consumption. It is believed that this is the first 60 GHz LNA with a higher than 20 dB gain using a 0.18 μm SiGe process.