The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

Feb. 28, 2005
Applicants:

Kenichi Tokano, Kanagawa, JP;

Motoshige Kobayashi, Kanagawa, JP;

Kazuyuki Saito, Kanagawa, JP;

Inventors:

Kenichi Tokano, Kanagawa, JP;

Motoshige Kobayashi, Kanagawa, JP;

Kazuyuki Saito, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device, includes: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50 micrometers or greater in thickness residing on parts of the upper surface side of the semiconductor substrate other than at least on the electrode pattern. And a method of manufacturing a semiconductor device, includes: forming elements on a semiconductor substrate; forming electrodes in a predetermined part on the elements; affixing an insulator sheet of 50 micrometers or greater in thickness to the upper surface side of the semiconductor substrate, the insulator sheet being processed to remove some parts so as to be aligned with the electrodes or regions where the elements are provided, processing a back surface side of the semiconductor substrate affixed within the insulator sheet to form the semiconductor substrate of 100 micrometers or lower in thickness, and dicing the semiconductor substrate into semiconductor chips.


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