The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Dec. 21, 2004
Applicants:
Won-cheol Jeong, Seoul, KR;
Hyeong-jun Kim, Seoul, KR;
Jae-hyun Park, Gyeonggi-do, KR;
Chang-wook Jeong, Seoul, KR;
Inventors:
Won-Cheol Jeong, Seoul, KR;
Hyeong-Jun Kim, Seoul, KR;
Jae-Hyun Park, Gyeonggi-do, KR;
Chang-Wook Jeong, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/00 (2006.01); H01L 31/036 (2006.01); H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
Abstract
Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.