The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Dec. 21, 2004
Won-cheol Jeong, Seoul, KR;
Hyeong-jun Kim, Seoul, KR;
Jae-hyun Park, Gyeonggi-do, KR;
Chang-wook Jeong, Seoul, KR;
Won-Cheol Jeong, Seoul, KR;
Hyeong-Jun Kim, Seoul, KR;
Jae-Hyun Park, Gyeonggi-do, KR;
Chang-Wook Jeong, Seoul, KR;
Abstract
Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile