The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jul. 31, 2006
Theodorus Eduardus Standaert, Pine Bush, NY (US);
Pegeen M. Davis, Millbrook, NY (US);
John Anthony Fitzsimmons, Poughkeepsie, NY (US);
Stephen Edward Greco, LaGrangeville, NY (US);
Tze-man Ko, Hopewell Junction, NY (US);
Naftali Eliahu Lustig, Croton on Hudson, NY (US);
Lee Matthew Nicholson, Katonah, NY (US);
Sujatha Sankaran, New Paltz, NY (US);
Theodorus Eduardus Standaert, Pine Bush, NY (US);
Pegeen M. Davis, Millbrook, NY (US);
John Anthony Fitzsimmons, Poughkeepsie, NY (US);
Stephen Edward Greco, LaGrangeville, NY (US);
Tze-Man Ko, Hopewell Junction, NY (US);
Naftali Eliahu Lustig, Croton on Hudson, NY (US);
Lee Matthew Nicholson, Katonah, NY (US);
Sujatha Sankaran, New Paltz, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.