The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

Nov. 04, 2005
Applicant:

Christoph Bromberger, Heilbronn, DE;

Inventor:

Christoph Bromberger, Heilbronn, DE;

Assignee:

Atmel Germany GmbH, Heilbronn, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor article and a semiconductor article is provided, wherein a base region of a first semiconductor material is applied, a silicide layer is applied above the base region, after the application of the silicide layer, an opening is created in the silicide layer by removing the silicide layer within the area of the opening, and after this, an emitter region is formed within the opening.


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