The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jun. 09, 2005
Syuusei Takami, Yusui-cho, JP;
Syuusei Takami, Yusui-cho, JP;
Yamaha Corporation, Shizuoka-Ken, JP;
Abstract
After forming a field insulating filmon a substrate, sacrificing or gate oxidation films are formed as oxidation filmsand. An ion implantation layeris formed by one or plurality of implantation process of argon (or fluoride) ion in an element holeusing a resist layeras a mask via the oxidation film. When the oxidation filmsandare used as sacrificing oxidation films, gate oxidation films are formed in the element holesandafter removing the resist filmand the oxidation filmsand. When the oxidation filmsandare used as gate oxidation films, the oxidation films are once thinned by etching and then thickened after removing the resist layer. The gate oxidation filmis thicker than the gate oxidation filmby forming the ion implantation layer