The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Dec. 27, 2006
Yong Jun Lee, Seoul, KR;
Yong Jun Lee, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method of manufacturing a split gate type non-volatile memory device includes the steps of defining an active region on a semiconductor substrate; forming a pair of first conductive film patterns, each having an electric charge storage layer interposed between the substrate and the first conductive film pattern, on the active region; forming a second conductive film on top of the first conductive film patterns and a remainder of the active region; etchbacking the entire surface of the second conductive film to planarize a top of the second conductive film formed between the first conductive film patterns; forming a photoresist pattern, with an opening corresponding to the active region between the first conductive film patterns, on the second conductive film; and forming a pair of split gates each having one of the first conductive film patterns and a second conductive film pattern formed by patterning the second conductive film using the photoresist pattern as an etching mask.