The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jun. 11, 2007
Applicant:
Atsushi Yagishita, Yokohama, JP;
Inventor:
Atsushi Yagishita, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprises an island shaped channel layer formed on a substrate, the channel later being composed of a semiconductor material, a gate insulation film formed on the channel layer, a gate electrode formed on the gate insulation film, an insulation film formed on both side faces opposite to one direction of the channel layer, a source electrode and a drain electrode made of a metal material and formed on a side face of the insulation layer.
Quick Actions:
Yagishita, Atsushi. (2009). Semiconductor device having a schottky source/drain transistor (U.S. Patent No. 7488631). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7488631
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile