The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Apr. 25, 2005
Susanne Arney, Highland Park, NJ (US);
Arman Gasparyan, New Providence, NJ (US);
Sungho Jin, San Diego, CA (US);
Omar D. López, Summit, NJ (US);
Herbert R. Shea, Washington Township, Bergen County, NJ (US);
Susanne Arney, Highland Park, NJ (US);
Arman Gasparyan, New Providence, NJ (US);
Sungho Jin, San Diego, CA (US);
Omar D. López, Summit, NJ (US);
Herbert R. Shea, Washington Township, Bergen County, NJ (US);
Alcatel-Lucent USA Inc., Murray Hill, NJ (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electro-mechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.