The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Dec. 27, 2006
Insulator film characteristic measuring method and insulator film characteristic measuring apparatus
Toshikazu Kitajima, Kyoto, JP;
Toshikazu Kitajima, Kyoto, JP;
Dainippon Screen Mfg. Co., Ltd., Kyoto, JP;
Abstract
A method is for measuring the characteristics of an insulator film (inner charge amount, film thickness, relative dielectric constant, surface voltage change due to a surface adsorbed substance, etc.) formed on a surface of a semiconductor substrate in a non-contact manner. This method includes: a step of measuring a measured surface voltage characteristic in a non-contact manner with respect to the insulator film; a step of provisionally setting a plurality of inner charge amounts; a step of calculating, with respect to each of the plurality of inner charge amounts, a theoretical surface voltage characteristic; a step of obtaining, with respect to each of the theoretical surface voltage characteristics, a mean value difference which is a difference between a surface voltage mean value of the measured surface voltage characteristics and a surface voltage mean value of the theoretical surface voltage characteristics, so that the mean value difference is set as a surface voltage change due to a surface adsorbed substance; a step of calculating, with respect to each of the theoretical surface voltage characteristics, a deviation of the measured surface voltage characteristic with respect to the corrected surface voltage characteristic; and a step of determining a set-point for the inner charge amount corresponding to the theoretical surface voltage characteristic which minimizes the deviation.