The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

Jun. 21, 2005
Applicants:

Shuichi Okawa, Tokyo, JP;

Kazuhiro Hattori, Tokyo, JP;

Mikiharu Hibi, Tokyo, JP;

Mitsuru Takai, Tokyo, JP;

Inventors:

Shuichi Okawa, Tokyo, JP;

Kazuhiro Hattori, Tokyo, JP;

Mikiharu Hibi, Tokyo, JP;

Mitsuru Takai, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); G11B 5/82 (2006.01); G11B 5/65 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The recording layer (to-be-etched layer), a main mask layer, and a sub mask layer are formed in this order over a substrate, and the sub mask layer is processed into a predetermined concavo-convex pattern. Next, parts of the main mask layer under the concave portions are removed by reactive ion etching using oxygen or ozone as the reactive gas. Parts of the recording layer under the concave portions are also removed by dry etching, whereby the recording layer is shaped into the concavo-convex pattern. The main mask layer is chiefly made of carbon. The sub mask layer is made of a material having an etching rate lower than that of carbon with respect to the reactive ion etching in the step of processing the main mask layer.


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