The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
May. 12, 2008
Bhavna Agrawal, Milton, NY (US);
David J. Hathaway, Underhill, VT (US);
Peng Peng, Essex Junction, VT (US);
Bhavna Agrawal, Milton, NY (US);
David J. Hathaway, Underhill, VT (US);
Peng Peng, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of estimating a leakage for a plurality of transistors in an integrated circuit that accounts for narrow channel effects includes determining an expected total leaking transistor width for the collection; determining an expected total number of leaking transistors for the collection; determining an average width of a leaking transistor from the expected total leaking transistor width and expected total number of leaking transistors; estimating a leakage for a transistor of the average width; and determining the estimated leakage for the collection of transistors by multiplying the leakage for a transistor of the average width by the expected total number of leaking transistors for the collection.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile