The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Dec. 12, 2005
Hye-jin Kim, Seoul, KR;
Du-eung Kim, Yongin-si, KR;
Kwang-jin Lee, Hwaseong-si, KR;
Yu-hwan RO, Seoul, KR;
Hye-Jin Kim, Seoul, KR;
Du-Eung Kim, Yongin-si, KR;
Kwang-Jin Lee, Hwaseong-si, KR;
Yu-Hwan Ro, Seoul, KR;
Abstract
Disclosed is a phase-changeable memory device and method of programming the same. The phase-changeable memory device includes memory cells each having multiple states, and a program pulse generator providing current pulses to the memory cells. The program pulse generator initializes a memory cell to a reset or set state by applying a first pulse thereto and thereafter provides a second pulse to program the memory cell to one of the multiple states. According to the invention, as a memory cell is programmed after being initialized to a reset or set state, it is possible to correctly program the memory cell without influence from the previous state of the memory cell.