The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Mar. 01, 2007
Stefano Pietri, Campinas, BR;
Jader Alves DE Lima Filho, Campinas, BR;
Alfredo Olmos, Campinas, BR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile