The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2009

Filed:

Mar. 29, 2006
Applicants:

Su-bong Hong, Suwon-si, KR;

Chun-gyoo Lee, Suwon-si, KR;

Sang-jo Lee, Suwon-si, KR;

Sang-ho Jeon, Suwon-si, KR;

Sang-hyuck Ahn, Suwon-si, KR;

Inventors:

Su-Bong Hong, Suwon-si, KR;

Chun-Gyoo Lee, Suwon-si, KR;

Sang-Jo Lee, Suwon-si, KR;

Sang-Ho Jeon, Suwon-si, KR;

Sang-Hyuck Ahn, Suwon-si, KR;

Assignee:

Samsung SDI Co., Ltd., Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01); H01J 63/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron emission device includes a first substrate; a second substrate facing the first substrate and separated therefrom by a predetermined distance; cathode electrodes, each comprising first electrodes formed on the first substrate, and a plurality of second electrodes spaced apart from the first electrodes; electron emission regions formed on the plurality of second electrodes; resistance layers interconnecting the first electrodes and each of the plurality of second electrodes while surrounding the electron emission regions; an insulating layer positioned over the resistance layers and the cathode electrodes; and gate electrodes formed over the insulating layer.


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