The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2009

Filed:

Jul. 14, 2006
Applicants:

Aaron R. Hawkins, Provo, UT (US);

Hong-wei Lee, Meridian, ID (US);

Inventors:

Aaron R. Hawkins, Provo, UT (US);

Hong-Wei Lee, Meridian, ID (US);

Assignee:

Brigham Young University, Provo, UT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

An input signal comprising electronic carriers is injected into an impact ionization device with a high electric field whereupon the electronic carriers are accelerated toward an electron collector or hole sink and subsequently ionize additional electrons and holes that accelerated toward the electron collector and hole sink respectively. When properly biased an avalanche effect may occur that is proportional to the current injected into the impact ionization device via the input electrode. As a result, the input signal is amplified to provide an amplified signal. The described amplifier may be integrated with an input device such as a photodiode, and a transimpedance output amplifier onto a common substrate resulting in high performance high density sensor arrays and the like.


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