The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2009

Filed:

Feb. 28, 2004
Applicants:

Chang-oh Jeong, Suwon-si, KR;

Beom-seok Cho, Seoul, KR;

Hee-hwan Choe, Incheon-si, KR;

Inventors:

Chang-Oh Jeong, Suwon-si, KR;

Beom-Seok Cho, Seoul, KR;

Hee-Hwan Choe, Incheon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.


Find Patent Forward Citations

Loading…