The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Feb. 13, 2007
Yusuke Kawaguchi, Miura-gun, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Syotaro Ono, Yokohama, JP;
Miwako Akiyama, Hachioji, JP;
Yusuke Kawaguchi, Miura-gun, JP;
Yoshihiro Yamaguchi, Saitama, JP;
Syotaro Ono, Yokohama, JP;
Miwako Akiyama, Hachioji, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer, and a base layer of a second conductivity type formed on the surface of the epitaxial layer. Column layers of a second conductivity type are repeatedly formed in the epitaxial layer under the base layer at a certain interval. Trenches are formed so as to penetrate the base layer to reach the epitaxial layer; and gate electrodes are formed in the trenches via a gate insulation film. A termination layer of a second conductivity type is formed on the epitaxial layer at an end region at the perimeter of the base layer. The termination layer is formed to have a junction depth larger than that of the base layer.