The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Nov. 04, 2002
Richard Francis, Manhattan Beach, CA (US);
Chiu NG, El Segundo, CA (US);
Richard Francis, Manhattan Beach, CA (US);
Chiu Ng, El Segundo, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
Semiconductor devices having recombination centers comprised of well-positioned heavy metals. At least one lattice defect region within the semiconductor device is first created using particle beam implantation. Use of particle beam implantation positions the lattice defect region(s) with high accuracy in the semiconductor device. A heavy metal implantation treatment of the device is applied. The lattice defects created by the particle beam implantation act as gettering sites for the heavy metal implantation. Thus, after the creation of lattice defects and heavy metal diffusion, the heavy metal atoms are concentrated in the well-positioned lattice defect region(s).