The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Mar. 11, 2005
Tae-yeong Seong, Gwangju-si, KR;
Kyoung-kook Kim, Gyeonggi-do, KR;
June-o Song, Gwangju-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Tae-yeong Seong, Gwangju-si, KR;
Kyoung-kook Kim, Gyeonggi-do, KR;
June-o Song, Gwangju-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Gwangju Institute of Science and Technology, Buk-Gu, Gwangju-Si, KR;
Abstract
A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.